Title	Link	Published	Description
Crystalline quality distributions of the type IIa diamond substrate and the CVD diamond layer processed by chemical mechanical polishing using a SiO₂ wheel	https://iopscience.iop.org/article/10.7567/JJAP.57.105503/meta	Feb 9, 2024, 8:19:02 PM	2018 - N. Tatsumi et al - Jpn. J. Appl. Phys. - 57 - 105503-1 – 105503-6 (XRT-300)
Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography	https://iopscience.iop.org/article/10.35848/1347-4065/abab46/meta	Feb 9, 2024, 8:19:02 PM	2020 - N. Shinagawa et al - Jpn. J. Appl. Phys. - 59 - 091002-1 – 091002-7
Transmission behavior of dislocations against Σ3 twin boundaries in Si	https://aip.scitation.org/doi/abs/10.1063/1.5139972	Feb 9, 2024, 8:19:02 PM	2020 - Yonenaga and K. Kutsukake - Jour. Appl. Phys. - 127 - 075107-1 – 075107-8
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes	https://aip.scitation.org/doi/abs/10.1063/1.4943165	Feb 9, 2024, 8:19:02 PM	2016 - Tanaka et al - Jour. Appl. Phys. - 119 - 095711-1 – 095711-
Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal	https://www.sciencedirect.com/science/article/pii/S0022024816307849	Feb 9, 2024, 8:19:02 PM	2017 - T. Abe et al - Jour. Cryst. Growth - 459 - 87-94
X-ray characterization of physical-vapor-transportgrown bulk AlN single crystals	https://journals.iucr.org/j/issues/2020/04/00/te5057/te5057.pdf	Feb 9, 2024, 8:19:02 PM	2020 - Thomas Wicht et al - Jour. Appl. Cryst. - 53 - 1080-1086